Modeling electrostatic potential in FDSOI MOSFETS: An approach based on homotopy perturbations
Kevkić, Tijana S. • Nikolić, Vojkan R. • Stojanović, Vladica S. • Milosavljević, Dragana D. • Jovanović, Slavica J.
Funding
Authors thank the Ministry of Education, Science and Technological Development of the Republic of Serbia for support under Contract No. 451-03-9/2021-14
Faculty of Sciences and Mathematics in Kosovska Mitrovica (University of Priština in Kosovska Mitrovica, Department of Physics) for support under the project ИЈ-0201
Faculty of Sciences and Mathematics in Kosovska Mitrovica (University of Priština in Kosovska Mitrovica, Department of Physics) for support under the project ИЈ-0201
Abstract
Modeling of the electrostatic potential for fully depleted (FD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) is presented in this article. The modeling is based on the analytical solution of two-dimensional Poisson’s equation obtained by using the homotopy perturbation method (HPM). The HPM with suitable boundary conditions results in the so-called HPM solution in general and closed-form, independent of the surface potential. The HPM solution has been applied in modeling the output characteristics of the FDSOI MOSFET, which show good agreement compared with the numerical results.